Manufacturer Part Number
IPP60R360P7XKSA1
Manufacturer
Infineon Technologies
Introduction
The IPP60R360P7XKSA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies' CoolMOS P7 series.
Product Features and Performance
650V Drain-Source Voltage (Vdss)
360mΩ maximum On-State Resistance (RDS(on))
9A continuous Drain Current (ID) at 25°C
555pF maximum Input Capacitance (Ciss)
41W maximum Power Dissipation (Tc)
Operating Temperature Range: -55°C to 150°C
Product Advantages
Excellent power handling capabilities
Low conduction losses due to low RDS(on)
High efficiency and reliability
Robust design for demanding applications
Key Technical Parameters
Vdss: 650V
Vgs (Max): ±20V
RDS(on) (Max): 360mΩ @ 2.7A, 10V
Ciss (Max): 555pF @ 400V
Qg (Max): 13nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Compatibility
Through-hole mounting (TO-220-3 package)
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
Currently available
No information on pending discontinuation or replacement models
Key Reasons to Choose This Product
High-voltage and high-current capabilities
Excellent efficiency and low conduction losses
Robust and reliable design for demanding applications
Compatibility with various high-power electronic systems
