Manufacturer Part Number
IPP60R280P6
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Part of the CoolMOS P6 series
Product Features and Performance
600V breakdown voltage
280mΩ maximum on-resistance
8A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1190pF at 100V
Product Advantages
Efficient power conversion due to low on-resistance
Excellent thermal performance
Reliable operation in high-voltage applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs) max: ±20V
On-resistance (Rds(on)) max: 280mΩ at 5.2A, 10V
Continuous drain current (Id) at 25°C: 13.8A
Input capacitance (Ciss) max: 1190pF at 100V
Power dissipation max: 104W at Tc
Quality and Safety Features
Robust MOSFET design for reliable performance
Compliance with relevant safety and quality standards
Compatibility
Suitable for use in a variety of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High reliability and ruggedness
Broad compatibility with various high-voltage, high-power applications
Part of the renowned CoolMOS P6 series from Infineon Technologies