Manufacturer Part Number
IPP60R280E6
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-channel MOSFET transistor from the CoolMOS E6 series by Infineon Technologies. It is designed for efficient power conversion and switching applications.
Product Features and Performance
High-voltage capability up to 600V
Low on-state resistance (Rds(on)) of 280mΩ
High continuous drain current of 13.8A at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge (Qg) of 43nC
Fast switching performance
Product Advantages
Improved energy efficiency
Reduced power losses
Compact design
Reliable operation in high-temperature environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 280mΩ
Continuous Drain Current (Id): 13.8A
Input Capacitance (Ciss): 950pF
Power Dissipation (Tc): 104W
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
This MOSFET is suitable for various power conversion and switching applications, including:
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating systems
Application Areas
Industrial electronics
Household appliances
Renewable energy systems
Telecommunications equipment
Product Lifecycle
This product is an active and currently available part from Infineon Technologies. There are no indications of it being near discontinuation, and suitable replacement or upgrade options may be available if needed.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
Reliable high-voltage operation up to 600V
Wide temperature range for demanding applications
Fast switching performance for high-frequency designs
Compact and space-saving TO-220 package
RoHS3 compliance for environmental sustainability
