Manufacturer Part Number
IPP60R380C6
Manufacturer
Infineon Technologies
Introduction
The IPP60R380C6 is a high-performance N-channel MOSFET transistor in a TO-220-3 package, part of Infineon's CoolMOS series.
Product Features and Performance
600V drain-source voltage (Vdss)
380mΩ maximum on-state resistance (RDS(on))
6A continuous drain current (ID) at 25°C
700pF maximum input capacitance (Ciss)
83W maximum power dissipation (Tc)
Wide operating temperature range of -55°C to 150°C
Product Advantages
High efficiency and low power losses due to low RDS(on)
Robust design with high voltage and temperature capabilities
Suitable for various power conversion and switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (RDS(on)): 380mΩ
Continuous Drain Current (ID): 10.6A
Input Capacitance (Ciss): 700pF
Power Dissipation (Tc): 83W
Quality and Safety Features
Meets industrial safety and quality standards
Robust design for reliable operation
Compatibility
Compatible with various power electronics and control circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
General power conversion and switching applications
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High efficiency and low power losses
Robust and reliable performance
Suitable for a wide range of power electronics applications
Part of the well-established CoolMOS series from Infineon
