Manufacturer Part Number
IPP60R520C6
Manufacturer
Infineon Technologies
Introduction
The IPP60R520C6 is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
600V drain-to-source voltage
520mΩ maximum on-resistance
1A continuous drain current at 25°C
-55°C to 150°C operating temperature range
Low gate charge and input capacitance for fast switching
Optimized for high-efficiency power conversion applications
Product Advantages
Excellent energy efficiency with low on-resistance
Fast switching capability
Wide operating temperature range
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 520mΩ @ 2.8A, 10V
Continuous Drain Current (Id): 8.1A (Tc)
Input Capacitance (Ciss): 512pF @ 100V
Power Dissipation (Tc): 29W
Quality and Safety Features
ROHS3 compliant
Qualified to automotive standards
Compatibility
Through-hole mounting in a TO-220-3 package
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades available from Infineon
Key Reasons to Choose
Excellent energy efficiency and low losses
Fast switching capability for high-frequency applications
Wide operating temperature range for demanding environments
Reliable and robust performance backed by Infineon's quality
