Manufacturer Part Number
IPP65R065C7
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET for high-voltage, high-power applications
Product Features and Performance
Extremely low on-state resistance (R_DS(on)) for low conduction losses
High voltage rating of 650V
Low gate charge (Q_g) for fast switching
Robust and reliable design for demanding applications
Product Advantages
Excellent efficiency due to low R_DS(on)
Enables compact and cost-effective power supply designs
Reliable operation in high-voltage, high-power environments
Key Technical Parameters
Drain-to-Source Voltage (V_DS): 650V
Gate-to-Source Voltage (V_GS): ±20V
On-State Resistance (R_DS(on)): 65mΩ
Continuous Drain Current (I_D): 33A
Input Capacitance (C_iss): 3020pF
Power Dissipation (P_D): 171W
Quality and Safety Features
Robust and reliable design for demanding applications
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power conversion and control systems
Product Lifecycle
This product is an active and widely used MOSFET solution
Replacement or upgraded options may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and performance due to low R_DS(on)
Enables compact and cost-effective power supply designs
Reliable operation in high-voltage, high-power environments
Robust and reliable design for demanding applications
