Manufacturer Part Number
IPP65R125C7
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS technology for high-efficiency power conversion applications
Product Features and Performance
Extremely low on-state resistance for high efficiency
High blocking voltage capability of 650V
Very low gate charge and input capacitance for fast switching
Stable performance across wide temperature range of -55°C to 150°C
Product Advantages
Optimized for high-efficiency, high-frequency power conversion
Enables compact, high-density power supply designs
Excellent thermal management and reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 125mΩ @ 8.9A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 1670pF @ 400V
Power Dissipation (Tc): 101W
Quality and Safety Features
Robust metal-oxide semiconductor structure for high reliability
Complies with safety standards for power electronics applications
Compatibility
Suitable for a wide range of high-efficiency power conversion applications
Application Areas
Switch-mode power supplies
Power factor correction circuits
Inverters and converters
Motor drives
Industrial and medical equipment
Product Lifecycle
Current production model, no plans for discontinuation
Replacement and upgrade options available from Infineon
Key Reasons to Choose This Product
Exceptional efficiency and power density performance
Reliable operation across wide temperature range
Optimized for high-frequency, high-power applications
Proven CoolMOS technology from a leading semiconductor manufacturer