Manufacturer Part Number
IPP65R190CFD7AAKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET
Part of the CoolMOS power transistor family
Product Features and Performance
Designed for automotive and industrial applications
Operates at high voltages up to 650V
Low on-resistance of 190 milliohms
Capable of handling continuous drain currents up to 14A
Wide operating temperature range of -40°C to 150°C
Fast switching and low gate charge
Product Advantages
Excellent thermal management
High efficiency
Robust design
Reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 190 milliohms
Continuous Drain Current (Id): 14A
Input Capacitance (Ciss): 1291pF
Power Dissipation (Tc): 77W
Gate Charge (Qg): 28nC
Quality and Safety Features
RoHS3 compliant
Automotive-qualified (AEC-Q101)
Designed for reliability and safety
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switching power converters
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Automotive-grade quality
Wide operating temperature range
Versatile compatibility for various applications
