Manufacturer Part Number
IPP65R225C7
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Designed for power conversion and motor drive applications
Product Features and Performance
650V drain-to-source voltage rating
225mΩ maximum on-resistance at 4.8A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 996pF at 400V
Maximum continuous drain current of 11A at 25°C
Product Advantages
Excellent efficiency with low on-resistance
High voltage capability for demanding applications
Compact TO-220 package for easy mounting
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 225mΩ at 4.8A, 10V
Continuous Drain Current (Id): 11A at 25°C
Input Capacitance (Ciss): 996pF at 400V
Power Dissipation (Ptot): 63W at 25°C
Quality and Safety Features
MOSFET technology for high reliability
Complies with safety standards for power electronics
RoHS compliant for environmental responsibility
Compatibility
Suitable for a wide range of power conversion and motor drive applications
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control systems
Product Lifecycle
Currently in production
No replacement or upgrade models announced at this time
Key Reasons to Choose This Product
Excellent efficiency and low on-resistance for high-performance power conversion
High voltage capability for demanding applications
Compact and easy-to-mount TO-220 package
Robust design for reliable operation in harsh environments
Proven MOSFET technology for long-term reliability
