Manufacturer Part Number
IPP65R380E6
Manufacturer
Infineon Technologies
Introduction
The IPP65R380E6 is a high-performance N-channel MOSFET transistor designed for use in a variety of power electronics applications.
Product Features and Performance
650V drain-source voltage rating
380mΩ maximum on-state resistance at 10V gate-source voltage
6A continuous drain current at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching characteristics with low gate charge (39nC at 10V)
Low input capacitance (710pF at 100V)
Robust design with high ruggedness and reliability
Product Advantages
Excellent efficiency and low power losses
High voltage handling capability
Compact and space-saving design
Suitable for high-frequency switching applications
Reliable performance in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 380mΩ
Continuous Drain Current (Id): 10.6A
Input Capacitance (Ciss): 710pF
Power Dissipation (Pd): 83W
Quality and Safety Features
Robust and reliable construction
Complies with relevant safety standards
Designed for high-reliability applications
Compatibility
Suitable for a wide range of power electronics applications
Can be used as a replacement or upgrade for similar MOSFET devices
Application Areas
Switch-mode power supplies
Motor drives
Induction heating
Inverters and converters
Industrial, medical, and consumer electronics
Product Lifecycle
Currently available and actively supported by the manufacturer
No plans for discontinuation in the near future
Replacement or upgrade options may become available over time
Key Reasons to Choose This Product
Excellent efficiency and low power losses
High voltage handling capability up to 650V
Compact and space-saving design
Reliable performance in harsh environments
Suitable for high-frequency switching applications
Robust and reliable construction for high-reliability applications
