Manufacturer Part Number
IPP65R660CFD
Manufacturer
Infineon Technologies
Introduction
High-voltage N-Channel MOSFET with CoolMOS technology.
Product Features and Performance
650V drain-source voltage
660mΩ maximum on-resistance
6A continuous drain current at 25°C
-55°C to 150°C operating temperature range
Low gate charge for efficient switching
Product Advantages
Excellent efficiency and thermal performance
Robust design for reliable operation
Optimized for high-voltage applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 660mΩ @ 2.1A, 10V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 615pF @ 100V
Power Dissipation (Ptot): 62.5W @ Tc
Quality and Safety Features
ROHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-voltage applications
Application Areas
Switch-mode power supplies
Motor drives
Induction heating
Welding equipment
Industrial automation
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade models may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Robust and reliable design for demanding applications
Optimized for high-voltage operation
Wide operating temperature range
Easy integration with through-hole mounting