Manufacturer Part Number
IPP65R190C7
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel MOSFET transistor
Product Features and Performance
Optimized for high-efficiency power conversion applications
Extremely low on-state resistance for low conduction losses
High-voltage capability up to 650V
Fast switching and low gate charge for high-speed operation
Robust and reliable design for industrial applications
Product Advantages
Excellent efficiency
High power density
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 190mΩ @ 5.7A, 10V
Continuous Drain Current (Id): 13A @ 25°C (Tc)
Input Capacitance (Ciss): 1150pF @ 400V
Power Dissipation (Tc): 72W
Quality and Safety Features
Robust design for industrial applications
Reliable and long-lasting performance
Compliance with safety standards
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting applications
Renewable energy systems
Industrial automation
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density
High-voltage capability for demanding applications
Fast switching and low gate charge for high-speed operation
Reliable and robust design for industrial use
Proven performance in a wide range of power conversion applications