Manufacturer Part Number
IPD80R2K7C3AATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS technology
Designed for automotive and industrial applications
Product Features and Performance
Low on-state resistance (Rds(on)) for low power losses
High blocking voltage capability up to 800V
Fast switching and low gate charge for improved efficiency
AEC-Q101 qualified for automotive applications
Rugged design with high short-circuit capability
Product Advantages
Improved energy efficiency
Reduced system size and weight
Increased reliability and safety
Key Technical Parameters
Drain to Source Voltage (Vdss): 800V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-state Resistance (Rds(on)): 2.7Ω @ 1.2A, 10V
Continuous Drain Current (Id): 2A @ 25°C (Tc)
Input Capacitance (Ciss): 290pF @ 100V
Power Dissipation (Ptot): 42W (Tc)
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualification
Robust design for high reliability and safety
Compatibility
Compatible with a wide range of industrial and automotive applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement and upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High energy efficiency and low power losses
Automotive-grade reliability and safety
Compact and lightweight design
Broad application versatility
Availability of technical support and long-term supply from Infineon
IPD80R280P7Cypress Semiconductor (Infineon Technologies)