Manufacturer Part Number
IPD80R1K2P7ATMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-performance, energy-efficient N-channel MOSFET in a TO-252 package
Product Features and Performance
800V breakdown voltage
Low on-resistance of 1.2Ω
Continuous drain current of 4.5A at 25°C case temperature
Low gate charge of 11nC at 10V
Wide operating temperature range of -55°C to 150°C
CoolMOS P7 technology for high efficiency
Product Advantages
High power density
Low switching losses
High reliability
Compact and space-saving design
Key Technical Parameters
Drain-source voltage (Vds): 800V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 1.2Ω @ 1.7A, 10V
Drain current (Id): 4.5A @ 25°C case temperature
Input capacitance (Ciss): 300pF @ 500V
Power dissipation (Ptot): 37W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Can be used in a wide range of power conversion applications, including:
Switching power supplies
Motor drives
Welding equipment
Induction heating
Lighting ballasts
Application Areas
Industrial
Automotive
Renewable energy
Home appliances
Product Lifecycle
Currently in production
Replacement or upgrade options available from Infineon
Several Key Reasons to Choose This Product
High efficiency and low switching losses
Compact and space-saving design
Reliable and robust performance
Wide range of compatibility and applications
Backed by Infineon's expertise and quality standards
IPD80R1K2P7INF