Manufacturer Part Number
IPD80R280P7ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPD80R280P7ATMA1 is a high-performance, N-channel MOSFET transistor designed for power conversion and switching applications.
Product Features and Performance
800V drain-to-source voltage (Vdss)
280mΩ maximum on-resistance (Rds(on)) at 7.2A, 10V
17A continuous drain current (Id) at 25°C
Low input capacitance (Ciss) of 1200pF at 500V
101W maximum power dissipation (Tc)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capabilities
Low on-resistance for high efficiency
Compact TO-252-3 package for space-saving design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 280mΩ @ 7.2A, 10V
Continuous Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 1200pF @ 500V
Power Dissipation (Tc): 101W
Quality and Safety Features
ROHS3 compliant
Housed in a reliable TO-252-3 package
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switchmode power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available from Infineon Technologies.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Compact package for space-saving design
Reliable and robust performance across a wide temperature range
Compatibility with a variety of power conversion and switching applications
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