IPD80R1K4CEATMA1 - Infineon Technologies

Manufacturer Part Number

IPD80R1K4CEATMA1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistor FET, MOSFET Single

Product Features and Performance

N-Channel MOSFET

800V Drain-Source Voltage

4Ω Max On-Resistance @ 2.3A, 10V

9A Continuous Drain Current @ 25°C

570pF Max Input Capacitance @ 100V

63W Max Power Dissipation

9V Max Gate Threshold Voltage @ 240A

10V Drive Voltage (Max Rds On, Min Rds On)

23nC Max Gate Charge @ 10V

Product Advantages

High Voltage Capability

Low On-Resistance

High Power Handling

Wide Temperature Range

Key Technical Parameters

Vdss: 800V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 1.4Ω @ 2.3A, 10V

Id (Continuous) @ 25°C: 3.9A

Ciss (Max) @ Vds: 570pF @ 100V

Pd (Max): 63W

Vgs(th) (Max) @ Id: 3.9V @ 240A

Qg (Max) @ Vgs: 23nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Wide Operating Temperature Range: -55°C to 150°C

Compatibility

Surface Mount Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Application Areas

Power Supplies

Motor Drives

Inverters

Switching Power Converters

Product Lifecycle

Current Product

Replacements and Upgrades Available

Key Reasons to Choose

High Voltage and Power Handling

Low On-Resistance for Efficiency

Wide Temperature Range for Versatility

Surface Mount Package for Easy Integration