Manufacturer Part Number
IPD80R1K4CEATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
800V Drain-Source Voltage
4Ω Max On-Resistance @ 2.3A, 10V
9A Continuous Drain Current @ 25°C
570pF Max Input Capacitance @ 100V
63W Max Power Dissipation
9V Max Gate Threshold Voltage @ 240A
10V Drive Voltage (Max Rds On, Min Rds On)
23nC Max Gate Charge @ 10V
Product Advantages
High Voltage Capability
Low On-Resistance
High Power Handling
Wide Temperature Range
Key Technical Parameters
Vdss: 800V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 1.4Ω @ 2.3A, 10V
Id (Continuous) @ 25°C: 3.9A
Ciss (Max) @ Vds: 570pF @ 100V
Pd (Max): 63W
Vgs(th) (Max) @ Id: 3.9V @ 240A
Qg (Max) @ Vgs: 23nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range: -55°C to 150°C
Compatibility
Surface Mount Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Application Areas
Power Supplies
Motor Drives
Inverters
Switching Power Converters
Product Lifecycle
Current Product
Replacements and Upgrades Available
Key Reasons to Choose
High Voltage and Power Handling
Low On-Resistance for Efficiency
Wide Temperature Range for Versatility
Surface Mount Package for Easy Integration
IPD80R1K2P7INF