Manufacturer Part Number
IPD80R450P7ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET transistor with CoolMOS technology for power electronics applications.
Product Features and Performance
800V drain-source voltage
450mΩ max. on-resistance
11A continuous drain current at 25°C
Low input capacitance of 770pF
Max. power dissipation of 73W
Wide operating temperature range of -55°C to 150°C
Product Advantages
Improved efficiency and reduced power losses
Compact and space-saving design
Reliable and robust performance
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 450mΩ
Continuous Drain Current (Id): 11A
Input Capacitance (Ciss): 770pF
Power Dissipation (Tc): 73W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
TO-252-3 (DPAK) package
Compatible with various power electronics circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Other high-power electronic applications
Product Lifecycle
This product is currently available and actively supported by the manufacturer.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and low power losses
Compact and space-saving design
Reliable and robust performance
Wide operating temperature range
Suitable for a variety of power electronics applications
IPD85P04P407ATMA2