Manufacturer Part Number
IPD80R4K5P7
Manufacturer
Infineon Technologies
Introduction
High-voltage, N-channel MOSFET with CoolMOS technology
Product Features and Performance
800V drain-to-source voltage
Very low on-resistance of 4.5Ω
5A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 80pF
Maximum power dissipation of 13W
Product Advantages
High efficiency and low switching losses
Compact design with DPak (TO-252-3) package
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.5Ω
Drain Current (Id): 1.5A
Input Capacitance (Ciss): 80pF
Power Dissipation (Pd): 13W
Quality and Safety Features
Robust design for reliable operation
Complies with safety and environmental standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switched-mode power supplies
Motor drives
Lighting ballasts
Inverters
Industrial electronics
Product Lifecycle
Currently in production, with no plans for discontinuation. Replacement or upgrade options available from Infineon.
Key Reasons to Choose
High voltage and current handling capability
Excellent efficiency and low switching losses
Compact and robust design
Reliable performance across a wide temperature range
Compatibility with various high-power applications
IPD80R450P7Cypress Semiconductor (Infineon Technologies)