Manufacturer Part Number
IPD85P04P407ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET designed for automotive and industrial applications
Optimized for efficiency in switching power supplies, motor drives, and other power conversion systems
Product Features and Performance
P-channel MOSFET with 40V drain-source voltage rating
Low on-resistance of 7.3mOhm at 85A, 10V
Capable of continuous drain current of 85A at 25°C case temperature
Fast switching with maximum gate charge of 89nC at 10V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Optimized for high efficiency in power conversion applications
Excellent thermal performance and reliability
Robust design for demanding automotive and industrial environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.3mOhm @ 85A, 10V
Continuous Drain Current (Id): 85A @ 25°C case temperature
Input Capacitance (Ciss): 6085pF @ 25V
Power Dissipation (Ptot): 88W @ 25°C case temperature
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant for environmental safety
Compatibility
Suitable for use in various power conversion and motor drive applications
Application Areas
Automotive systems (e.g., powertrain, body electronics, driver assistance)
Industrial power supplies and motor drives
Switch-mode power supplies
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacements and upgrades may be available as technology evolves
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Robust design for demanding automotive and industrial environments
Proven reliability and safety through AEC-Q101 qualification
Compatibility with a wide range of power conversion and motor drive applications
IPD900P06NMINF