Manufacturer Part Number
IPD85P04P4L06ATMA2
Manufacturer
Infineon Technologies
Introduction
This is a single P-Channel MOSFET transistor from Infineon's OptiMOS-P2 series, designed for high-performance power switching applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 40V
Continuous Drain Current (Id) of 85A at 25°C
Very low On-Resistance (Rds(on)) of 6.4mΩ at 85A, 10V
Wide Operating Temperature Range of -55°C to 175°C
Excellent Input Capacitance (Ciss) of 6580pF at 25V
High Power Dissipation Capability of 88W at Tc
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal performance and reliability
Suitable for high-current, high-power applications
Ease of use with wide Vgs range of +5V/-16V
Key Technical Parameters
MOSFET Technology: P-Channel
Vgs(th) (Max): 2.2V at 150A
Gate Charge (Qg) (Max): 104nC at 10V
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Quality and Safety Features
RoHS3 Compliant
Qualified to the highest industrial standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial controls
Automotive electronics
Product Lifecycle
This product is currently in active production
Replacement or upgrade options are available from Infineon
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Reliable and robust design for demanding applications
Ease of integration with wide Vgs range and low Qg
Proven track record in high-current, high-power designs
Availability of various package options and support from Infineon
IPD900P06NMINF