Manufacturer Part Number
IPD85P04P4L06ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPD85P04P4L06ATMA1 is a P-channel MOSFET transistor designed for automotive and industrial applications. It features low on-resistance and high current handling capabilities.
Product Features and Performance
40V Drain-to-Source Voltage (Vdss)
85A Continuous Drain Current (Id) at 25°C
4mOhm Maximum On-Resistance (Rds(on)) at 85A, 10V
6580pF Maximum Input Capacitance (Ciss) at 25V
88W Maximum Power Dissipation at Tc
-55°C to 175°C Operating Temperature Range
Product Advantages
Optimized for automotive and industrial applications
Excellent thermal and electrical performance
Compact DPak package for efficient heat dissipation
Compliant with AEC-Q101 automotive standard
Key Technical Parameters
P-Channel MOSFET
±16V Maximum Gate-to-Source Voltage (Vgs)
2V Maximum Gate Threshold Voltage (Vgs(th)) at 150A
104nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualification
Compatibility
Suitable for various automotive and industrial applications
Application Areas
Power management
Motor control
Automotive electronics
Industrial automation
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
Excellent thermal and electrical performance for high-power applications
Compact and efficient DPak package
Automotive-grade AEC-Q101 qualification for reliable operation
Wide operating temperature range of -55°C to 175°C
Optimized for both automotive and industrial use cases
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