Manufacturer Part Number
IPD80R3K3P7ATMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel MOSFET with CoolMOS P7 technology
Product Features and Performance
800V drain-source voltage
Low on-resistance of 3.3Ω
9A continuous drain current at 25°C
Low input capacitance of 120pF
Low gate charge of 5.8nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Improved energy efficiency
Reduced power losses
Compact design
Reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.3Ω
Continuous Drain Current (Id): 1.9A
Input Capacitance (Ciss): 120pF
Power Dissipation (Ptot): 18W
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Compatibility
Surface mount TO-252-3 (D-Pak) package
Tape and reel packaging
Application Areas
Switching power supplies
Motor drives
Induction heating
Home appliances
Industrial electronics
Product Lifecycle
Currently available
No plans for discontinuation
Upgrades and replacements may be available in the future
Key Reasons to Choose This Product
High voltage and low on-resistance for improved energy efficiency
Compact design and surface mount package for space-saving applications
Wide operating temperature range for reliable operation
Proven CoolMOS P7 technology for reduced power losses
IPD85P04P4-07INF