Manufacturer Part Number
IPD30N06S2L-23
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for a wide range of power management and switching applications.
Product Features and Performance
Operating temperature range: -55°C to 175°C (TJ)
Drain to Source Voltage (Vdss): 55V
Maximum Gate-Source Voltage (Vgs Max): ±20V
Very low on-state resistance (Rds(on) Max): 23mOhm @ 22A, 10V
Continuous Drain Current (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss Max) @ 25V: 1091pF
Maximum Power Dissipation: 100W (Tc)
N-Channel MOSFET technology
Product Advantages
Excellent efficiency and power density
Robust and reliable performance
Suitable for high-current, high-power applications
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Gate-Source Voltage (Vgs Max): ±20V
On-State Resistance (Rds(on) Max): 23mOhm @ 22A, 10V
Continuous Drain Current (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss Max) @ 25V: 1091pF
Power Dissipation (Max): 100W (Tc)
Quality and Safety Features
Robust and reliable design
Meets industry safety and quality standards
Compatibility
Designed for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Lighting and energy management systems
Product Lifecycle
This product is an active and widely-used MOSFET in the Infineon OptiMOS series.
Replacement and upgrade options are available.
Key Reasons to Choose This Product
Excellent efficiency and power density
Robust and reliable performance over a wide temperature range
Suitable for high-current, high-power applications
Proven track record in the industry
Available in a compact, surface-mount package