Manufacturer Part Number
IPD30N06S2-15
Manufacturer
Infineon Technologies
Introduction
The IPD30N06S2-15 is a discrete N-Channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
55V Drain-Source Voltage (Vdss)
30A Continuous Drain Current (Id) at 25°C
7mΩ maximum On-Resistance (Rds(on)) at 30A, 10V
1485pF Input Capacitance (Ciss) at 25V
136W Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
High efficiency and low power losses
Robust and reliable design
Suitable for a wide range of power conversion and switching applications
Key Technical Parameters
N-Channel MOSFET
Vgs(th) (Max): 4V @ 80A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max): 110nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Tape & Reel (TR) packaging
Application Areas
Power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
This product is an active and in-production part from Infineon Technologies.
Replacements and upgrades may be available as technology advances.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance and high power handling
Robust and reliable design for demanding applications
Wide operating temperature range for flexibility in different environments
Surface mount packaging for compact and automated assembly
RoHS3 compliance for use in environmentally-conscious applications