Manufacturer Part Number
IPD30N06S2L-13
Manufacturer
Infineon Technologies
Introduction
This product is a single N-Channel MOSFET transistor from Infineon's OptiMOS series.
Product Features and Performance
High power density
Low on-resistance
Fast switching speed
Robust design
Wide operating temperature range (-55°C to 175°C)
High drain current capability (30A continuous at 25°C)
Low input capacitance (1800pF)
Low gate charge (69nC)
Product Advantages
Optimized for high-efficiency power conversion applications
Excellent thermal performance
Reliable and durable construction
Versatile and flexible usage
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Gate to Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 13mΩ @ 30A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Power Dissipation (Tc): 136W
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Reliable and robust construction
Compatibility
This MOSFET is designed for a wide range of power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Lighting ballasts
Industrial automation and control
Product Lifecycle
This product is an active and widely used component in Infineon's OptiMOS series. There are no indications of it being discontinued or replaced in the near future.
Several Key Reasons to Choose This Product
High efficiency and power density
Excellent thermal performance and reliability
Wide operating temperature range
Versatile usage in various power conversion applications
Robust and durable construction
Competitive pricing and availability
IPD30N06INFIN