Manufacturer Part Number
IPD30N06S2L23ATMA3
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a transistor - FET, MOSFET - Single device from Infineon Technologies.
Product Features and Performance
N-Channel MOSFET with low on-resistance
Optimized for high-efficiency power conversion applications
Capable of operating at high temperatures up to 175°C
Low input capacitance and gate charge for fast switching
Product Advantages
Excellent thermal performance and power dissipation
Suitable for high-frequency, high-efficiency power conversion
Robust and reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 23mΩ @ 22A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 1091pF @ 25V
Power Dissipation (Tc): 100W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 175°C
Compatibility
Packaged in TO-252-3, DPak (2 Leads + Tab), SC-63 format
Available in Tape & Reel (TR) packaging
Application Areas
Suitable for high-efficiency power conversion applications, such as:
- Switch-mode power supplies
- Motor drives
- DC-DC converters
- Inverters
Product Lifecycle
This product is currently available and supported by the manufacturer.
Several Key Reasons to Choose This Product
Excellent thermal performance and power dissipation capability
Fast switching and low input capacitance for high-frequency operation
Robust and reliable operation at high temperatures
Suitable for a wide range of high-efficiency power conversion applications
IPD30N06INFIN