Manufacturer Part Number
IPD30N06S3L-20
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.
Product Features and Performance
55V drain-to-source voltage
20mΩ max on-resistance at 17A, 10V
30A continuous drain current at 25°C
2600pF max input capacitance at 25V
45W max power dissipation at 25°C
Wide operating temperature range of -55°C to 175°C
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact TO-252-3 (D-Pak) surface-mount package
Key Technical Parameters
N-channel MOSFET
55V drain-to-source voltage
2V max gate threshold voltage at 20A
5V and 10V gate drive voltage options
Quality and Safety Features
RoHS3 compliant
Reliable performance within specified operating conditions
Compatibility
This MOSFET is suitable for use in various power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial controls
Automotive electronics
Product Lifecycle
The IPD30N06S3L-20 is an active product, and Infineon Technologies continues to manufacture and support it. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent performance-to-size ratio with low on-resistance and high current handling
Compact and efficient surface-mount package
Wide operating temperature range for reliable operation in diverse environments
RoHS compliance for environmental responsibility
Backed by Infineon Technologies' reputation for quality and reliability
