Manufacturer Part Number
IPD30N06S2L13ATMA4
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
Robust and reliable MOSFET design
Low on-resistance (Rds(on)) of 13 mΩ @ 30A, 10V
High current rating of 30A continuous drain current (Tc)
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge of 69 nC @ 10V
Optimized for high-efficiency power conversion
Product Advantages
Excellent power handling and thermal performance
Efficient power conversion with low conduction losses
Versatile application in various power electronics designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 55V
Gate-Source Voltage (Vgs): ±20V
Input Capacitance (Ciss): 1800 pF @ 25V
Power Dissipation (Tc): 136W
Quality and Safety Features
RoHS3 compliant
Reliable and rugged design for industrial applications
Compatibility
Surface mount package (TO-252-3, D-Pak)
Compatible with a wide range of power electronics circuits
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Renewable energy systems
Product Lifecycle
This product is an active and widely used MOSFET from Infineon
Replacement or upgrade options are available for future design needs
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Reliable and rugged performance for industrial applications
Optimized for high-frequency, high-power switching
Extensive application support and lifecycle from Infineon
