Manufacturer Part Number
IPD30N03S4L14ATMA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-channel MOSFET transistor from Infineon Technologies' OptiMOS series. It is designed for a wide range of power management and control applications.
Product Features and Performance
30V drain-to-source voltage
30A continuous drain current at 25°C
Low on-resistance of 13.6mΩ at 10V gate voltage
High power dissipation of 31W at Tc = 25°C
Fast switching capabilities with low gate charge of 14nC at 10V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent efficiency and thermal performance
Optimized for high-frequency switching
Robust and reliable design
Suitable for space-constrained applications
Key Technical Parameters
Vdss: 30V
Vgs(max): ±16V
Rds(on) max: 13.6mΩ
Id continuous: 30A
Ciss max: 980pF
Power dissipation max: 31W
Quality and Safety Features
RoHS3 compliant
Halogen-free package
Compatibility
This MOSFET is compatible with a wide range of power management and control applications, including:
Switch-mode power supplies
Motor drives
Industrial automation and control
Lighting and LED drivers
Application Areas
Power conversion and control
Battery management
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
This MOSFET is a current production device and is not nearing discontinuation. Replacements and upgrades may be available as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Optimized for high-frequency switching
Robust and reliable design
Suitable for space-constrained applications
Wide operating temperature range
RoHS3 compliance and halogen-free package
IPD30N06INFIN