CY14B101LA-ZS45XI - Infineon Technologies

Manufacturer Part Number

CY14B101LA-ZS45XI

Manufacturer

Infineon Technologies

Introduction

The CY14B101LA-ZS45XI is a Non-Volatile SRAM (NVSRAM) integrated circuit manufactured by Infineon Technologies.

Product Features and Performance

1Mbit (128K x 8) of NVSRAM storage

Parallel memory interface

45ns access time

45ns write cycle time for word and page

Operates from 2.7V to 3.6V power supply

Wide operating temperature range of -40°C to 85°C

Product Advantages

Non-volatile storage with SRAM-like performance

Fast read and write access times

Wide voltage and temperature operating ranges

Compact 44-TSOP II package

Key Technical Parameters

Memory Size: 1Mbit

Memory Organization: 128K x 8

Memory Type: Non-Volatile SRAM

Memory Interface: Parallel

Access Time: 45ns

Write Cycle Time (Word, Page): 45ns

Supply Voltage: 2.7V to 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

RoHS3 compliant

44-TSOP II package

Compatibility

This NVSRAM is compatible with a wide range of electronic devices and systems that require non-volatile, fast-access memory.

Application Areas

Industrial automation and control systems

Medical equipment

Automotive electronics

Telecommunications equipment

Consumer electronics

Product Lifecycle

The CY14B101LA-ZS45XI is an active and currently available product from Infineon Technologies. There are no immediate plans for discontinuation, and replacement or upgrade options may be available.

Key Reasons to Choose This Product

Non-volatile SRAM technology providing fast read and write performance

Wide operating voltage and temperature ranges for versatile applications

Compact 44-TSOP II package for space-constrained designs

RoHS3 compliance for use in environmentally-conscious applications

Proven reliability and quality from Infineon Technologies, a leading semiconductor manufacturer