CY14B101LA-SZ25XIT - Infineon Technologies

Manufacturer Part Number

CY14B101LA-SZ25XIT

Manufacturer

Infineon Technologies

Introduction

The CY14B101LA-SZ25XIT is a high-performance, low-power, non-volatile SRAM (NVSRAM) memory device. It combines the best features of SRAM and EEPROM, providing non-volatile data storage with SRAM-like access speed and cycle times.

Product Features and Performance

1Mbit of non-volatile memory

128K x 8 memory organization

Parallel memory interface

25ns write cycle time (word/page)

25ns access time

7V to 3.6V operating voltage

Wide operating temperature range of -40°C to 85°C

Product Advantages

Seamless transition between volatile and non-volatile memory modes

Endurance of over 1 million write cycles

Data retention of over 20 years

High-speed SRAM-like performance

Low-power consumption

Key Reasons to Choose This Product

Reliable and robust non-volatile memory solution

Ideal for applications requiring fast data access and data retention

Versatile and easy to integrate into various electronic systems

Cost-effective alternative to traditional EEPROM or battery-backed SRAM

Quality and Safety Features

Compliant with industry standards

Rigorous quality control and testing procedures

Designed for reliable and secure data storage

Compatibility

Compatible with a wide range of electronic devices and systems

Application Areas

Industrial automation

Instrumentation and control systems

Automotive electronics

Telecommunications equipment

Medical devices

Consumer electronics

Product Lifecycle

The CY14B101LA-SZ25XIT is an obsolete product. Customers are advised to contact our website's sales team for information on equivalent or alternative models that may be available.