CY14B101LA-BA45XI - Infineon Technologies

Manufacturer Part Number

CY14B101LA-BA45XI

Manufacturer

Infineon Technologies

Introduction

High-performance non-volatile SRAM (NVSRAM) with integrated 1Mbit memory and parallel interface

Product Features and Performance

1Mbit memory capacity

45ns access time

7V to 3.6V operating voltage range

Wide operating temperature range of -40°C to 85°C

Parallel memory interface

Product Advantages

Seamless integration of non-volatile and volatile memory

Endurance of up to 1 million write cycles

Data retention of up to 20 years

Key Technical Parameters

Memory Technology: NVSRAM (Non-Volatile SRAM)

Memory Size: 1Mbit

Memory Interface: Parallel

Access Time: 45ns

Write Cycle Time: 45ns

Supply Voltage: 2.7V to 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

RoHS3 compliant

48-FBGA (6x10) package

Compatibility

Can be used in a variety of embedded systems and industrial applications

Application Areas

Industrial automation

Telecommunications equipment

Medical devices

Consumer electronics

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High-performance NVSRAM with fast access and write times

Wide operating temperature range for industrial and harsh environments

Endurance and data retention for reliable operation

Seamless integration of non-volatile and volatile memory

RoHS3 compliance for environmental responsibility