CY14B101KA-ZS25XI - Infineon Technologies

Manufacturer Part Number

CY14B101KA-ZS25XI

Manufacturer

Infineon Technologies

Introduction

The CY14B101KA-ZS25XI is a 1Mbit non-volatile static random access memory (NVSRAM) by Infineon Technologies, designed for high-performance data storage that retains information without power.

Product Features and Performance

Non-Volatile Memory

1Mbit Memory Size

128K x 8 Memory Organization

parallel Memory Interface

NVSRAM Technology

Fast Write Cycle Time of 25ns

Quick Access Time of 25ns

Wide Operating Voltage Range 2.7V to 3.6V

High Operating Temperature Range -40°C to 85°C

Surface Mount Package for Solid State Reliability

Product Advantages

Persistent data storage without battery backup

Instantaneous non-volatile writes

No delay during write cycles

High reliability with endurance and data retention

Suitable for harsh temperature environments

Easy integration with surface mount technology

Key Technical Parameters

Memory Size: 1Mbit

Write Cycle Time: 25ns

Access Time: 25ns

Voltage Supply Range: 2.7V to 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

Robust construction for reliable storage

Tested for safe operation in varied conditions

Compatibility

Parallel interface for compatibility with a wide range of microcontrollers and systems

Application Areas

Industrial control systems

Automotive electronics

Data logging devices

Networking equipment

Medical devices

Product Lifecycle

Last Time Buy status

Potential for product discontinuation

Contact manufacturer for information on replacements or upgrades

Several Key Reasons to Choose This Product

Strong performance-to-power consumption ratio for energy-sensitive applications

Durable construction designed for long-term deployment

Wide voltage and temperature operating ranges, suitable for extreme environments

Provides reliable data storage with non-volatility feature

Fast read and write capabilities for performance-critical applications