Manufacturer Part Number
CY14B101LA-SZ45XI
Manufacturer
Infineon Technologies
Introduction
High-performance Non-Volatile SRAM with 1Mbit storage capacity designed for a wide range of applications where data persistence is critical.
Product Features and Performance
Non-Volatile SRAM (NVSRAM) technology
1Mbit memory size with a 128K x 8 organization
Parallel memory interface for easy integration
45ns Write Cycle Time for quick data management
45ns Access Time enabling fast read operations
7V to 3.6V supply voltage range for system flexibility
Surface Mount 32-SOIC package for PCB efficiency
Product Advantages
Retains data without power due to non-volatile characteristics
Rapid data access and write cycles improve system performance
Low power consumption suitable for battery-powered applications
Directly compatible with a wide range of microcontrollers and processors
Key Technical Parameters
Memory Type: NVSRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature Range: -40°C ~ 85°C
Memory Size: 1Mbit
Access Time: 45 ns
Write Cycle Time - Word, Page: 45ns
Quality and Safety Features
Designed for high-reliability applications
Extended operating temperature range suitable for industrial environments
Compatibility
Compatible with systems requiring parallel interface NVSRAM
Mounting Type suitable for standard PCB assembly processes
Application Areas
Industrial control systems
Automotive electronics
Medical devices
Networking equipment
Data logging and storage systems
Product Lifecycle
Obsolete - Product is no longer being manufactured
Potential need to seek replacements or upgrades for new designs
Several Key Reasons to Choose This Product
Proven reliability of Infineon Technologies' memory products
Non-volatile storage preserves critical data in the absence of power
High-speed operation enhances overall system responsiveness
Wide operating voltage range and temperature stability for versatile use
Suitable for mission-critical applications where data integrity is paramount