CY14B101NA-ZS45XI - Infineon Technologies

Manufacturer Part Number

CY14B101NA-ZS45XI

Manufacturer

Infineon Technologies

Introduction

The CY14B101NA-ZS45XI is a high-performance Non-Volatile SRAM manufactured by Infineon Technologies designed to retain data without external power.

Product Features and Performance

Non-Volatile SRAM (NVSRAM) Technology

Memory Size of 1Mbit

Memory Organization: 64K x 16

Parallel Memory Interface

Fast Write Cycle Time and Access Time of 45ns

Operates across a Voltage range of 2.7V to 3.6V

Operating Temperature range from -40°C to 85°C

Product Advantages

Retains data without external power

High-speed access and write capabilities

Excellent for applications requiring frequent or rapid data updates

Durable and reliable within a wide range of temperatures and voltages

Key Technical Parameters

Memory Type: Non-Volatile

Memory Format: NVSRAM

Memory Size: 1Mbit

Access Time: 45ns

Voltage Supply: 2.7V 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

Robust Construction in a 44-TSOP II package

Designed for high reliability and stable operation in adverse conditions

Compatibility

Compatible with devices requiring a parallel memory interface and 2.7V~3.6V voltage levels

Application Areas

Industrial automation and control systems

Automotive electronics

Data logging systems in harsh environments

Portable electronic devices

Product Lifecycle

Status: Active

Not nearing discontinuation, with ongoing manufacturer support and availability

Several Key Reasons to Choose This Product

Ensures data integrity with non-volatile memory

High-speed performance for both read and write operations

Wide operational temperature and voltage range adaptability

Universally compatible with a broad range of electronic systems

Secure and reliable for critical and sensitive data applications