CY14B101PA-SFXI - Infineon Technologies

Manufacturer Part Number

CY14B101PA-SFXI

Manufacturer

Infineon Technologies

Introduction

The CY14B101PA-SFXI is a 1Mbit Non-Volatile SRAM (NVSRAM) from Infineon Technologies, designed for high-speed data storage and memory retention across a broad range of supply voltages and operating temperatures.

Product Features and Performance

Memory Type: Non-Volatile

Memory Format: NVSRAM

Technology: NVSRAM (Non-Volatile SRAM)

Memory Size: 1Mbit

Memory Organization: 128K x 8

Memory Interface: SPI

Clock Frequency: 40 MHz

Voltage Supply Range: 2.7V to 3.6V

Operating Temperature Range: -40°C to 85°C

Mounting Type: Surface Mount

Package: 16-SOIC (0.295", 7.50mm Width)

Product Advantages

Retains data without power

Fast access time and write cycle

Low power consumption

Resilient to a wide range of environmental conditions

Simple interface with SPI protocol

Reliable data retention over temperature extremes

Key Technical Parameters

Memory Size: 1Mbit

Clock Frequency: 40 MHz

Voltage - Supply: 2.7V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Designed for high reliability and durability under extreme conditions

Compatibility

SPI Interface for easy integration with a wide range of microcontrollers and digital systems

Application Areas

Embedded Systems

Industrial Controls

Medical Devices

Automotive Electronics

Data Logging Systems

Product Lifecycle

Status: Active

Not nearing discontinuation, ensuring long-term availability for design and production

Several Key Reasons to Choose This Product

High-speed data retention and retrieval

Broad voltage and temperature operating range

Non-volatile storage reduces data loss risk

Energy-efficient design for battery-powered and energy-sensitive applications

Robust package suitable for various mounting types

Easy integration with existing digital systems via SPI

Active product status ensures ongoing support and availability

Ideal for applications requiring fast, reliable data storage and retrieval under harsh conditions