Manufacturer Part Number
CY14B101NA-ZS25XI
Manufacturer
Infineon Technologies
Introduction
High-speed Non-Volatile Static RAM with 1Mbit storage capacity.
Product Features and Performance
1Mbit NVSRAM Capacity
Parallel Memory Interface
High-speed 25ns Access Time
25ns Write Cycle Time for Word and Page
Powered by 2.7V to 3.6V Supply Voltage
Operating Temperature Range from -40°C to +85°C
Surface Mount 44-TSOP II Package
Memory Organized as 64K x 16
Utilizes NVSRAM (Non-Volatile SRAM) technology
Product Advantages
Retains data without power
Quick access and write times
High reliability and durability
Compatible with a wide range of operating temperatures
Integrated Power-down feature for data retention
Directly replaces battery-backed SRAM products
Key Technical Parameters
Memory Size: 1Mbit
Memory Format: NVSRAM
Write Cycle Time: 25ns
Access Time: 25ns
Voltage - Supply: 2.7V ~ 3.6V
Package: 44-TSOP II
Quality and Safety Features
Built-in Power-down feature for data retention
Robust storage at extreme temperature conditions
Compatibility
Compatible with standard SRAM interfaces
Can be easily integrated into existing systems with parallel memory interfaces
Application Areas
Industrial automation systems
Networking equipment
Medical devices
Automotive electronics
Data storage applications
Product Lifecycle
Active product status
Not flagged for discontinuation
Possibility for future upgrades or replacements
Several Key Reasons to Choose This Product
Non-volatility ensures data retention without power
Suitable for mission-critical applications due to robust performance parameters
Easy integration with existing systems reduces development time
Hardware write protection to prevent inadvertent writes or data corruption
High reliability in extreme environmental conditions
Fast access and write times facilitate responsive systems
CY14B101LA-SZ25XIKUCypress Semiconductor
CY14B101LA-ZS45XITInfineon TechnologiesIC NVSRAM 1MBIT PAR 44TSOP II
CY14B101Q1A-SXIInfineon TechnologiesIC NVSRAM 1MBIT SPI 40MHZ 8SOIC