CY14B101LA-SZ25XI - Infineon Technologies

Manufacturer Part Number

CY14B101LA-SZ25XI

Manufacturer

Infineon Technologies

Introduction

The CY14B101LA-SZ25XI is a high-performance, low-power, non-volatile static random-access memory (NVSRAM) integrated circuit from Infineon Technologies.

Product Features and Performance

1Mbit of non-volatile SRAM memory

25ns access time

7V to 3.6V operating voltage

Wide temperature range of -40°C to 85°C

Parallel memory interface

128K x 8 memory organization

Product Advantages

Combination of SRAM speed and non-volatile storage

Low power consumption

Wide temperature range for diverse applications

Reliable and long-lasting data retention

Key Technical Parameters

Memory Size: 1Mbit

Memory Interface: Parallel

Access Time: 25ns

Write Cycle Time: 25ns

Supply Voltage: 2.7V to 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

RoHS3 compliant

32-SOIC package for surface mount

Compatibility

32-SOIC package for standard PCB mounting

Application Areas

Industrial and embedded systems

Portable devices

Automotive electronics

Telecommunications equipment

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options are available from Infineon.

Key Reasons to Choose This Product

High-performance non-volatile SRAM with fast access and write speeds

Low power consumption and wide temperature range for versatile applications

Reliable and long-lasting data retention

RoHS3 compliance and standard 32-SOIC package for easy integration