Manufacturer Part Number
CY14B101KA-ZS45XIT
Manufacturer
Infineon Technologies
Introduction
The CY14B101KA-ZS45XIT is a high-performance, low-power NVSRAM (Non-Volatile SRAM) memory chip from Infineon Technologies. It offers a storage capacity of 1Mbit with a parallel memory interface, making it suitable for a wide range of applications that require non-volatile data storage with fast read and write access.
Product Features and Performance
Memory Type: Non-Volatile SRAM (NVSRAM)
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Interface: Parallel
Write Cycle Time (Word, Page): 45ns
Access Time: 45ns
Supply Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Product Advantages
Non-volatile data storage with fast read and write speeds
Low power consumption for energy-efficient operation
Wide operating temperature range for use in diverse environments
Parallel memory interface for easy integration into various systems
Key Reasons to Choose This Product
Reliable and high-performance NVSRAM solution
Ideal for applications that require fast, non-volatile data storage
Versatile in terms of power supply and operating temperature
Seamless integration into a wide range of electronic systems
Quality and Safety Features
Robust design and manufacturing process for reliable operation
Compliance with industry standards and safety regulations
Compatibility
The CY14B101KA-ZS45XIT is compatible with a variety of electronic systems and devices that require non-volatile memory.
Application Areas
Industrial automation and control systems
Automotive electronics
Telecommunications equipment
Medical devices
Consumer electronics
Product Lifecycle
The CY14B101KA-ZS45XIT is an active product in Infineon's portfolio. There are no immediate plans for discontinuation, and there are no direct equivalent or alternative models available from Infineon. For the latest information on product availability and any updates, please contact our website's sales team.