SMMUN2233LT1G - onsemi

Manufacturer Part Number

SMMUN2233LT1G

Manufacturer

onsemi

Introduction

The SMMUN2233LT1G is a pre-biased NPN bipolar junction transistor (BJT) designed for use in a variety of electronic circuits and applications.

Product Features and Performance

High breakdown voltage of 50V

Low collector-emitter saturation voltage of 250mV

Wide operating current range up to 100mA

Low collector cutoff current of 500nA

Robust pre-biased design for stable operation

Compact SOT-23-3 surface mount package

Product Advantages

Provides stable, pre-biased operation without the need for additional biasing components

Compact size and surface mount packaging enable efficient board layout

Excellent electrical characteristics for use in amplifier, switch, and logic circuit applications

Key Technical Parameters

Power Rating: 246mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

DC Current Gain (hFE): Minimum 80 @ 5mA, 10V

Base Resistor (R1): 4.7kΩ

Emitter-Base Resistor (R2): 47kΩ

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Suitable for a wide range of electronic circuit applications, including amplifiers, switches, and logic circuits

Application Areas

Consumer electronics

Industrial control systems

Telecommunications equipment

Automotive electronics

Product Lifecycle

Currently in active production

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

Stable, pre-biased operation without additional components

Compact size and surface mount packaging for efficient board layout

Excellent electrical characteristics for reliable performance in various applications

RoHS3 compliance for use in environmentally-conscious designs

Backed by onsemi's quality manufacturing and available replacement options