Manufacturer Part Number
SMMUN2111LT1G
Manufacturer
onsemi
Introduction
The SMMUN2111LT1G is a pre-biased PNP bipolar junction transistor (BJT) from onsemi. It is designed for use in automotive and industrial applications.
Product Features and Performance
High collector-emitter breakdown voltage of 50V
Collector current rating of up to 100mA
Low collector-emitter saturation voltage of 250mV @ 10mA
Integrated base and emitter resistors of 10kΩ each
Suitable for surface mount applications
Product Advantages
Improved reliability and stability due to pre-biased design
Reduced component count in circuit design
Compact surface mount package
Key Technical Parameters
Power Rating: 246mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current: 100mA
Collector Cutoff Current: 500nA
DC Current Gain: 35 min @ 5mA, 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with standard surface mount assembly processes
Can be used as a replacement for other pre-biased PNP BJTs in similar applications
Application Areas
Automotive electronics
Industrial control systems
Power supply circuits
Analog signal conditioning
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
Reliable pre-biased design for improved stability
Compact surface mount package for space-constrained designs
Wide voltage and current ratings suitable for a variety of applications
Automotive and industrial grade quality and reliability
Readily available and supported by onsemi