SMMUN2211LT3G - onsemi

Manufacturer Part Number

SMMUN2211LT3G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single, Pre-Biased

Product Features and Performance

Automotive-grade, AEC-Q101 qualified

246 mW maximum power

50 V maximum collector-emitter breakdown voltage

100 mA maximum collector current

500 nA maximum collector cutoff current

250 mV maximum collector-emitter saturation voltage

35 minimum DC current gain (hFE)

10 kΩ base resistor

10 kΩ emitter-base resistor

Product Advantages

Robust automotive-grade performance

Integrated biasing resistors for simplified circuit design

Small SOT-23-3 (TO-236) surface mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5 mA, 10 V

Resistor Base (R1): 10 kΩ

Resistor Emitter Base (R2): 10 kΩ

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Surface mount SOT-23-3 (TO-236) package

Application Areas

Automotive electronics

Industrial controls

General-purpose amplification and switching

Product Lifecycle

Current production, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

Robust automotive-grade performance and reliability

Integrated biasing resistors for simplified circuit design

Small, space-saving surface mount package

RoHS compliance and AEC-Q101 qualification