SMMUN2214LT1G - onsemi

Manufacturer Part Number

SMMUN2214LT1G

Manufacturer

onsemi

Introduction

The SMMUN2214LT1G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, designed for a wide range of applications.

Product Features and Performance

Power rating of 246 mW

Collector-Emitter breakdown voltage of 50 V

Collector current (max) of 100 mA

Collector cutoff current (max) of 500 nA

Low saturation voltage of 250 mV @ 10 mA, 300 μA

DC current gain (hFE) of 80 min @ 5 mA, 10 V

Integrated 10 kΩ base resistor and 47 kΩ emitter-base resistor

Product Advantages

Pre-biased configuration simplifies circuit design

Compact SOT-23-3 surface mount package

Reliable performance in a variety of applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V

Resistor Base (R1): 10 kΩ

Resistor Emitter Base (R2): 47 kΩ

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount SOT-23-3 (TO-236) package

Application Areas

Suitable for a wide range of electronic applications, including amplifiers, switches, and general-purpose logic circuits

Product Lifecycle

This product is currently available and not nearing discontinuation.

Key Reasons to Choose This Product

Pre-biased configuration simplifies circuit design

Compact, surface-mountable SOT-23-3 package

Reliable performance with high voltage, current, and power ratings

Integrated base and emitter-base resistors for easy implementation

RoHS3 compliance for environmentally-friendly applications