Manufacturer Part Number
SMMUN2134LT1G
Manufacturer
onsemi
Introduction
Pre-biased PNP bipolar junction transistor (BJT)
Designed for general-purpose applications
Product Features and Performance
Power rating of 246 mW
Collector-emitter breakdown voltage up to 50 V
Collector current up to 100 mA
Collector cutoff current as low as 500 nA
Saturation voltage as low as 250 mV at 1 mA and 10 mA collector current
DC current gain (hFE) of at least 80 at 5 mA and 10 V collector-emitter voltage
Built-in base and emitter-base resistors of 22 kΩ and 47 kΩ, respectively
Product Advantages
Pre-biased design simplifies circuit design
Compact SOT-23-3 (TO-236) surface mount package
RoHS3 compliant
Key Technical Parameters
Power rating: 246 mW
Collector-emitter breakdown voltage: 50 V
Collector current: 100 mA
Collector cutoff current: 500 nA
Saturation voltage: 250 mV
DC current gain (hFE): 80 (min)
Base resistor: 22 kΩ
Emitter-base resistor: 47 kΩ
Quality and Safety Features
RoHS3 compliant
Compact and reliable SOT-23-3 (TO-236) package
Compatibility
Suitable for general-purpose applications requiring a pre-biased PNP BJT
Application Areas
Analog and digital circuits
Switches
Amplifiers
Voltage regulators
Product Lifecycle
This product is an active and widely available component
Replacement or upgrade options are readily available from onsemi and other manufacturers
Key Reasons to Choose This Product
Pre-biased design for simplified circuit implementation
Compact and reliable surface mount package
Wide operating voltage and current range
Robust performance characteristics
RoHS3 compliance for environmentally-friendly applications