SMMUN2114LT1G - onsemi

Manufacturer Part Number

SMMUN2114LT1G

Manufacturer

onsemi

Introduction

The SMMUN2114LT1G is a pre-biased PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package.

Product Features and Performance

Provides high current gain and low saturation voltage

Suitable for low-power analog and digital switching applications

Optimized for switching and amplification in electronic circuits

Product Advantages

Pre-biased for simplified circuit design

Compact SOT-23-3 (TO-236) package for space-saving layouts

Robust construction for reliable operation

Key Technical Parameters

Power Rating: 246 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 100 mA

Collector Cutoff Current: 500 nA

Collector-Emitter Saturation Voltage: 250 mV

DC Current Gain: 80 (min)

Base Resistor: 10 kΩ

Emitter-Base Resistor: 47 kΩ

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable performance and long lifespan

Compatibility

Compatible with standard surface-mount PCB assembly processes

Suitable for a wide range of analog and digital circuit applications

Application Areas

Low-power analog and digital switching circuits

Amplification and switching in electronic devices

General-purpose transistor applications

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Optimized performance for low-power analog and digital switching

Simplified circuit design with pre-biased transistor

Compact and reliable SOT-23-3 (TO-236) package

Compliance with environmental standards (RoHS3)

Widespread compatibility and versatile application areas