SMMUN2113LT1G - onsemi

Manufacturer Part Number

SMMUN2113LT1G

Manufacturer

onsemi

Introduction

Discrete semiconductor product

Bipolar junction transistor (BJT), single, pre-biased

Product Features and Performance

Automotive-grade, AEC-Q101 qualified

Low power dissipation of 246 mW

High voltage capability up to 50 V collector-emitter breakdown voltage

High collector current up to 100 mA

Low collector cutoff current of 500 nA

Low collector-emitter saturation voltage of 250 mV at 10 mA collector current

High DC current gain of 80 minimum at 5 mA collector current

Product Advantages

Robust and reliable performance for automotive applications

Integrated base and emitter resistors for easy biasing

Small SOT-23-3 (TO-236) surface-mount package

Key Technical Parameters

Collector-emitter breakdown voltage: 50 V

Collector current: 100 mA

Collector cutoff current: 500 nA

Collector-emitter saturation voltage: 250 mV at 10 mA

DC current gain: 80 minimum at 5 mA collector current

Base and emitter resistor values: 47 kΩ each

Quality and Safety Features

RoHS3 compliant

Automotive-grade AEC-Q101 qualification

Compatibility

Surface-mount SOT-23-3 (TO-236) package

Application Areas

Automotive electronics

Industrial control systems

Consumer electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Robust and reliable performance for automotive and industrial applications

Integrated biasing resistors for easy implementation

Small surface-mount package for space-constrained designs

Automotive-grade qualification for enhanced reliability