Manufacturer Part Number
NVR1P02T1G
Manufacturer
onsemi
Introduction
This product is a single P-channel MOSFET transistor part of the Automotive, AEC-Q101 series.
Product Features and Performance
MOSFET (Metal Oxide) technology
P-Channel type
Drain to Source Voltage (Vdss) of 20V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-state Resistance (Rds On) of 180mOhm @ 1.5A, 10V
Continuous Drain Current (Id) of 1A @ 25°C
Input Capacitance (Ciss) of 165pF @ 5V
Maximum Power Dissipation of 400mW @ Ta
Gate Charge (Qg) of 2.5nC @ 5V
Wide Operating Temperature range of -55°C to 150°C (TJ)
Product Advantages
Automotive-grade AEC-Q101 qualified
Suitable for high-temperature applications
Compact SOT-23-3 (TO-236) surface mount package
RoHS3 compliant
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Maximum Gate-Source Voltage (Vgs): ±20V
On-state Resistance (Rds On): 180mOhm @ 1.5A, 10V
Continuous Drain Current (Id): 1A @ 25°C
Input Capacitance (Ciss): 165pF @ 5V
Power Dissipation (Max): 400mW @ Ta
Gate Charge (Qg): 2.5nC @ 5V
Threshold Voltage (Vgs(th)): 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Suitable for use in automotive and industrial applications
Suitable for high-temperature environments
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Automotive-grade AEC-Q101 qualification for reliability
Wide operating temperature range of -55°C to 150°C
Low on-state resistance and high current handling capability
Compact SOT-23-3 (TO-236) surface mount package
RoHS3 compliance for environmental friendliness