Manufacturer Part Number
NVR5198NLT1G
Manufacturer
onsemi
Introduction
Single N-channel enhancement-mode MOSFET transistor
Product Features and Performance
Wide voltage range of 60V
Low on-resistance of 155mΩ @ 1A, 10V
High continuous drain current of 1.7A at 25°C
Low gate charge of 5.1nC @ 10V
Automotive-qualified to AEC-Q101 standard
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency and thermal performance
Suitable for high-power switching and amplifier applications
Robust design for automotive and industrial use
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 1.7A @ 25°C
On-Resistance (Rds(on)): 155mΩ @ 1A, 10V
Input Capacitance (Ciss): 182pF @ 25V
Power Dissipation (Pd): 900mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Automotive-qualified to AEC-Q101 standard
Compatibility
Compatible with a wide range of electronic applications
Application Areas
Automotive electronics
Industrial power supplies
Switching power converters
Motor control
Amplifiers
Product Lifecycle
This product is currently in production and available.
Replacements or upgrades may be available in the future.
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Robust design for automotive and industrial applications
Wide voltage and temperature range
Low on-resistance and gate charge for improved switching efficiency
Automotive-qualified to AEC-Q101 standard for reliability