Manufacturer Part Number
NVR4501NT1G
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
N-channel type
Drain-to-Source voltage (Vdss) of 20V
Gate-to-Source voltage (Vgs) range of ±12V
On-state resistance (Rds(on)) of 80mΩ at 3.6A and 4.5V
Continuous Drain Current (Id) of 3.2A at 25°C
Input Capacitance (Ciss) of 200pF at 10V
Power Dissipation (Pd) of 1.25W
Gate Charge (Qg) of 6nC at 4.5V
Operating Temperature range of -55°C to 150°C
Product Advantages
Suitable for automotive and industrial applications
High performance and efficiency
Compliant with RoHS 3 directive
Available in compact SOT-23-3 (TO-236) package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-state Resistance (Rds(on)): 80mΩ
Continuous Drain Current (Id): 3.2A
Input Capacitance (Ciss): 200pF
Power Dissipation (Pd): 1.25W
Gate Charge (Qg): 6nC
Quality and Safety Features
RoHS 3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Suitable for use in automotive and industrial applications
Application Areas
Automotive electronics
Industrial control systems
Power supplies
Motor control
Switching circuits
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgraded models may be available in the future, but no discontinuation information is provided.
Several Key Reasons to Choose This Product
High performance and efficiency with low on-state resistance and high current capability.
Wide operating temperature range of -55°C to 150°C, making it suitable for demanding applications.
Compact SOT-23-3 (TO-236) package for space-constrained designs.
Compliance with RoHS 3 directive and automotive-grade AEC-Q101 qualification for quality and safety.
Versatile applications in automotive, industrial, and power electronics systems.