Manufacturer Part Number
FCI25N60N-F102
Manufacturer
onsemi
Introduction
The FCI25N60N-F102 is a high-performance N-Channel MOSFET from onsemi, designed for a wide range of power conversion and control applications.
Product Features and Performance
600V drain-source voltage rating
25A continuous drain current at 25°C
125mΩ maximum on-resistance at 12.5A, 10V
Low gate charge of 74nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent switching performance
High power density
Reliable and robust design
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 125mΩ @ 12.5A, 10V
Continuous Drain Current (Id): 25A @ 25°C
Input Capacitance (Ciss): 3352pF @ 100V
Power Dissipation (Pd): 216W @ Tc
Quality and Safety Features
RoHS3 compliant
Thermally efficient I2PAK (TO-262) package
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power factor correction
Chopper circuits
Product Lifecycle
Currently in production
No discontinuation or replacement plans known
Key Reasons to Choose This Product
Excellent power handling capabilities
High efficiency and reliability
Suitable for high-voltage, high-current applications
Proven onsemi technology and quality